IEEE 1620-2008 pdf download IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
1.3.1 Testing apparatus
Testing is performed using an electronic device test system with measurement sensitivity suficient to givean accuracy of at least +0.1% (minimum sensitivity at or better than three orders of magnitude belowexpected signal level). For example, the smallest current through an organic transistor is often the gateleakage current. If gate leakage is approximately 1 pA (10-2 A), the instrument shall have a resolution ofI fA (10-5 A) or smaller. Additionally, due to the large (>I G2) impedances encountered in organicdevices, the input impedance of all elements of the test system shall be at least three orders of magnitudegreater than the highest impedance in the device. Commercial semiconductor systems with the capability tocharacterize organic devices typically have input impedance values of 10 2 which is a recommendedminimum yalue
This test method requires that the instrumentation be calibrated against a known and appropriate set ofstandards (e.g.. National Institute of Standards and Technology, NIST). These calibrations maybeperformed by the equipment user or as a service by the equipment vendor. Calibration is not performedagainst a known organic field-effect transistor (OFET) or other FET-type device; the basic instrumentoperations (e.g., voltage, current, and resistance) are calibrated against some method traceable to a NIST(or similar internationally recognized standards organization) physical standard. Re-calibration is requiredaccording to the instrument manufacturer’s recommendations or when the instrument is moved or when thetesting conditions change significantly (e.g, temperature change greater than 10 °C, relative humiditychange greater than 30%).
1.3.2 Measurement techniques
1.3.21 Required measurements
Characterization of the organic transistor requires at minimum the following two primary sets ofmeasurements:
The transfer (Ips vs. Ves) curves, which allow for preliminary determination of field-effectmobility, u, and threshold voltage.V.
The I versus V output (lps vs. Vps) curves that provide saturation and general electrical performanceinformation. This curve is used to determine whether the device exhibits FET-like behavior.
The gate leakage (Ies vs. Ves) curves that characterize the gate dielectric quality and quantifyleakage current from the gate to the channel. Leakage measurements are carried out prior totransfer or I versus V easurements to ensure gate dielectric integrity before subsequentmeasurements are performed. Gate leakage characterization is necessary to ensure that itsmagnitude is negligible to the magnitude of the drain current, so that reliable and useful devicecharacteristics may be measured and key parameters extracted.
1.3.22 Recommended measurementsThe following additional measurement is strongly recommended:
The stray capacitance values Cp and Cas Stray capacitance values have a negative effect ondevice switching speed and may affect device electrical characterization.
IEEE 1620-2008 pdf download
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