IEEE C62.37.1-2000 pdf download IEEE Guide for the Application of Thyristor Surge Protective Devices
1.Scope
This application guide applies to thyristor surge protective device (thyristor SPD) components used insystems with voltages up to 1000 V rms or 1200 V dc. These components are designed to limit overvoltagesand divert surge currents by voltage clamping and crowbarring (switching to a low impedance) actionsAlthough telecommunication circuits are the main application of thyristor SPDs, this guide will also provideuseful information for other protection applications.
This guide is intended to complement the IEEE Standard Test Specification for Thyristor Diode SurgeProtective Devices (IEEE C62.37-1996). The definitions used in these two standards are the same.
This publication contains information on
a) Basic function and component description
b) General terms and definitions
c) Electrical environment
d) Parameter interpretation and application
e) Example designs
f) SPD technology comparison
When used in conjunction with IEEE Std C62.37-1996,this guide will give the user guidance in interpretingits specifications and in selecting the correct product.
2. References
This guide shall be used in conjunction with the following publications:
IEC 60050-191 (1990-12): International Electrotechnical Vocabulary (EV)-Chapter 191: Dependabilityand quality of service.
3. Definitions
For the purpose of this guide, the following definition has been used in addition to those in lEEE StdC62.37-1996 and The Authoritative Dictionary ofIEEE Standards Terms (B8J3.
3.1 anti-parallel (connection): A parallel combination of two semiconductor elements, where the maincurrent entry electrode of one element connects to the main current exit electrode of the other element.allowing one element to pass current in one voltage polarity and the other element to pass current in theopposite voltage polarity. (syn: inverse-parallel connection in IEEE 100 B87)
4. Basic function and component description
This clause covers the basic device structure, its equivalent circuit, characteristic values, operationalparameters,and structures with increased functions.
4.1 Basic device structure
Thyristor overvoltage protectors are manufactured by creating a series of N-type and P-type layers in asilicon chip. The basic thyristor structure has three PN junctions that require four layers (NPNP). As onelayer can be the starting silicon itself (N or P-type silicon) a further three layers have to be made.
Figure 1 shows the simplified structure of a unidirectional thyristor SPD. The switching quadrant (seeFigure 3) occurs when the bottom contact is positive with respect to the top contact. Also shown are thelumped equivalent circuit elements created by the semiconductor layers. This example started manufacturewith an N slice of silicon. Layers of P material are then created at the top and the bottom. A further Nregion is then made on the top surface. Finally the top and the bottom metallization are added to providecontacts. The upper right section of the contact metal is not shown in order to illustrate the detail of thetopside silicon surface.
4.2 Device equivalent circuit
In Figure l, transistor TRI is formed by the NPN- layers. Similarly transistor TR2 is formed by the PN Payers. The device breakdown voltage is determined by the breakdown of the central N P layers, which forma shared collector-base junction for transistors TRI and TR2. For clarity, the breakdown function is shownas breakdown diode Dl. Resistance RI is the lateral resistance of the P layer. Resistor R2 together withresistor RI shunt the base-emitter junction of transistor TRI to define the value of holding curent, ly
IEEE C62.37.1-2000 pdf download
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